Passivation of GaAs surface recombination with organic thiols
نویسندگان
چکیده
منابع مشابه
Passivation of GaAs surface by ultrathin epitaxial GaN layer
Ultrathin gallium nitride passivation layers grown in situ on near-surface InxGa1 xAs=GaAs quantum wells using metalorganic vapour-phase epitaxy (MOVPE) with dimethylhydrazine as nitrogen source are reported. Nitridation of GaAs using DMHy during the post-growth cool-down is also studied. The effect of passivation on the surface recombination rate of quantum well (QW) structures is characterize...
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ژورنال
عنوان ژورنال: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
سال: 1991
ISSN: 0734-211X
DOI: 10.1116/1.585743